Enhancement of Conversion Efficiency of GaAs/InAs p-i-n Solar Cell Embedding Quantum Dot

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dc.contributor.authorSakib, Shadman
dc.contributor.authorProva, Asma Sadia
dc.date.accessioned2018-02-27T05:38:27Z
dc.date.available2018-02-27T05:38:27Z
dc.date.issued8/23/2017
dc.descriptionThis thesis submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electronics and Telecommunication Engineering of East West University, Dhaka, Bangladesh
dc.description.abstractA high efficiency GaAs/InAs quantum dot (QD) solar cell is designed embedding InAs QD in as an intrinsic layer. Embedded QD boost the efficiency of the solar cell. Without QD we achieve 14.1% efficiency of the GaAs Solar cell. When embedding 15 layers of InAs QDs in the intrinsic layer, at AM1.5 solar radiations, the proposed cell structure had a Voc of 1.25 V, Jsc of 32.9073 mA.cm-2, a maximum power is 36.97mW.cm-2 and a fill factor of 89.9%, corresponding to an overall efficiency of 36.97%. Therefore, the positive effects of embedded quantum dots are proved to be helpful in improving solar cell's performance.
dc.identifier.otherhttp://dspace.ewubd.edu:8080/handle/123456789/2552
dc.identifier.urihttp://dspace.ewubd.edu/handle/2525/2552
dc.language.isoen_US
dc.publisherEast West University
dc.sourceEast West University Institutional Repository
dc.subjectGaAs/InAs p-i-n Solar Cell Embedding Quantum Dot
dc.titleEnhancement of Conversion Efficiency of GaAs/InAs p-i-n Solar Cell Embedding Quantum Dot
dc.typeThesis

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