Enhancement of Conversion Efficiency of GaAs/InAs p-i-n Solar Cell Embedding Quantum Dot

Abstract

A high efficiency GaAs/InAs quantum dot (QD) solar cell is designed embedding InAs QD in as an intrinsic layer. Embedded QD boost the efficiency of the solar cell. Without QD we achieve 14.1% efficiency of the GaAs Solar cell. When embedding 15 layers of InAs QDs in the intrinsic layer, at AM1.5 solar radiations, the proposed cell structure had a Voc of 1.25 V, Jsc of 32.9073 mA.cm-2, a maximum power is 36.97mW.cm-2 and a fill factor of 89.9%, corresponding to an overall efficiency of 36.97%. Therefore, the positive effects of embedded quantum dots are proved to be helpful in improving solar cell's performance.