Avijit Das
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Item Transient anode voltage modeling of IGBT and its carrier lifetime dependence(© 2015 IEEE, 2015-11) Das, Avijit; Islam, Nazmul; Haq, Masud Ul; Khan, ZiaurrahmanThis work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for derivation of minority carrier concentration within the base. With the help of derived expression, an analytical model has been developed for turn-off voltage of IGBT in all minority carrier lifetime conditions. Better agreements with experimental data have been found compared to the linear model generally used. Finally, the implications of carrier lifetime dependence on the anode voltage are discussed, including implementation of such a carrier lifetime measurement technique.Item Transient anode voltage modeling of IGBT and its base doping profile investigation(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015-12) Das, Avijit; Md Ziaur Rahman, KhanIn many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through investigation into transient anode voltage modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for derivation of minority carrier concentration within the base. With the derived expression, an analytical model has been developed for turn-off anode voltage of IGBT in all doping profile conditions. Better agreements with the experimental results have been found compared to the previously used linear model. Finally, the implications of base doping dependence on the anode voltage are discussed, including implementation of such a doping concentration estimation technique