Transient anode voltage modeling of IGBT and its carrier lifetime dependence
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Date
2015-11
Journal Title
Journal ISSN
Volume Title
Publisher
© 2015 IEEE
Abstract
This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for derivation of minority carrier concentration within the base. With the help of derived expression, an analytical model has been developed for turn-off voltage of IGBT in all minority carrier lifetime conditions. Better agreements with experimental data have been found compared to the linear model generally used. Finally, the implications of carrier lifetime dependence on the anode voltage are discussed, including implementation of such a carrier lifetime measurement technique.
Description
This conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sands Cotai CentralMacau; Macau; 1 November 2015 through 4 November 2015 [© 2015 IEEE] and the definite version is available at : http://doi.org/10.1109/TENCON.2015.7372970 The Journal's website is at: https://ieeexplore.ieee.org/document/7372970/
Keywords
Carrier lifetime control, Effective base width, Minority carrier lifetime, Parabolic approximation, Transient Anode Voltage
Citation
Das, A., Islam, N., Haq, M. -., & Khan, Z. R. (2016). Transient anode voltage modeling of IGBT and its carrier lifetime dependence. Paper presented at the IEEE Region 10 Annual International Conference, Proceedings/TENCON, , 2016-January doi:10.1109/TENCON.2015.7372970