Relaxation characteristics of oxide trapped charge in an MOS structure - a quantum mechanical approach

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dc.contributor.advisorKhosru, Dr. Quazi Deen Mohd.
dc.contributor.authorNasir Uddin, Mohammad
dc.date.accessioned2016-10-04T04:24:27Z
dc.date.available2016-10-04T04:24:27Z
dc.date.issued1996-04
dc.description.abstractFor abstracts please see full text
dc.identifier.otherhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3849
dc.identifier.urihttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3849
dc.language.isoen
dc.publisherDepartment of Electrical and Electronic Engineering, BUET
dc.sourceBUET Institutional Repository
dc.subjectRelaxation characteristics
dc.subjectOxide trapped charge
dc.subjectMOS structure - a quantum
dc.subjectMechanical approach
dc.titleRelaxation characteristics of oxide trapped charge in an MOS structure - a quantum mechanical approach
dc.typeThesis-MSc

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