Relaxation characteristics of oxide trapped charge in an MOS structure - a quantum mechanical approach

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1996-04

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Department of Electrical and Electronic Engineering, BUET

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Relaxation characteristics, Oxide trapped charge, MOS structure - a quantum, Mechanical approach

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http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3849

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Dissertations/Theses - Department of Electrical and Electronic Engineering

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