Transient switch-on collector current analysis in punch-through IGBT

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dc.contributor.advisorDas, Avijit
dc.contributor.authorIslam, Md. Akhirul
dc.contributor.authorHossain, MD. Nazmul
dc.contributor.authorAltab, M. Mubaswir
dc.contributor.authorBhowmik, Tonmoy
dc.date.accessioned2017-08-21T07:43:45Z
dc.date.available2017-08-21T07:43:45Z
dc.date.issued2017
dc.descriptionCataloged from PDF version of thesis.
dc.descriptionThis thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
dc.description.abstractAnalysis of switching power loss of IGBT is considered desirable. In our thesis, the switch on behavior is analyzed through investigation into transient anode collector current of Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT). Changing the Doping concentration, gate voltage and collector to emitter voltage along with different temperature in punch through IGBT we compared different collector currents.
dc.identifier.otherID 12121114
dc.identifier.otherID 12321066
dc.identifier.otherID 12321067
dc.identifier.otherID 12321068
dc.identifier.otherhttps://dspace.bracu.ac.bd/server/api/core/items/44cab0e8-6d1c-4c1b-9b38-35dee5f47c26
dc.identifier.urihttp://hdl.handle.net/10361/8419
dc.language.isoen
dc.publisherBRAC University
dc.sourceBRAC University Institutional Repository
dc.subjectIGBT
dc.subjectHefner model
dc.titleTransient switch-on collector current analysis in punch-through IGBT
dc.typeThesis

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