Transient switch-on collector current analysis in punch-through IGBT
Date
2017
Journal Title
Journal ISSN
Volume Title
Publisher
BRAC University
Abstract
Analysis of switching power loss of IGBT is considered desirable. In our thesis, the switch on behavior is analyzed through investigation into transient anode collector current of Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT). Changing the Doping concentration, gate voltage and collector to emitter voltage along with different temperature in punch through IGBT we compared different collector currents.
Description
Cataloged from PDF version of thesis.
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
Keywords
IGBT, Hefner model