Analytical Modeling of Silicon Nanowire Transistor - Effect of Width Variation

Abstract

The effect of width variation of a Silicon nanowire MOSFET is studied in this work. We considered a ballistic gate-all-around Silicon nanowire MOSFET. The eigen energies of the time independent Schrodinger’s equation were found by solving the Bessel’s function. The eigen energies were used to find the drain current. We have used an analytical compact model to calculate the drain current. The effect of width variation on the drain current, transfer characteristics, transconductance, subthreshold swing, saturation current and saturation current density of the device are investigated. According to our observation the subthreshold swing decreases and the peak of transconductance increases as the wire widens. Saturation current increases with increase in width. Increase in saturation current density with decrease in wire width is an important motivation for choosing narrow wires in MOSFETs.