Design and Simulation of CdS/CIGS p-i-n high Efficiency Solar Cell

Abstract

A high efficiency CdS/CIGS solar cell is designed using an intrinsic layer and a highly doped CdS as a back surface field (BSF) layer. With the combination of TCO layer (ZnO), CdS window layer, CIGS BSF layer, the higher conversion efficiency is achieved which is about 29.216% in simulation. After introducing intrinsic layer efficiency increased by great extent. In addition to this, with the increase of thickness of intrinsic layer efficiency also increased. At AM 1.5 solar radiations, the proposed cell structure had a Vocof 0.696 V, aJsc of 59.975 mAcm-2, a maximum power is 34.945 mW/cm2 and a fill factor of 84%, corresponding to an overall efficiency of 29.216%