Sub-nano Regime DG-MOSFETs
| dc.contributor.author | Hasan, Md. Rokib | |
| dc.contributor.author | Islam, Md. Rabiul | |
| dc.contributor.author | Hassan, Md. Kamrul | |
| dc.contributor.author | Mannan, Mohammad Abdul | |
| dc.date.accessioned | 2024-01-16T10:21:14Z | |
| dc.date.available | 2024-01-16T10:21:14Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | The significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric Field (EF). | |
| dc.identifier.citation | Md. Rokib Hasan, Md. Rabiul Islam, Md. Kamrul Hassan and Mohammad Abdul Mannan, “Sub-nano Regime DG-MOSFETs,” Journal of Semiconductor Devices and Circuits (STM Journals), Vol. 5, Issue 3, pp. 1-7, 2018. | |
| dc.identifier.other | http://dspace.aiub.edu:8080/xmlui/handle/123456789/2012 | |
| dc.identifier.uri | http://dspace.aiub.edu:8080/jspui/handle/123456789/2012 | |
| dc.language.iso | en | |
| dc.publisher | STM Journals | |
| dc.source | AIUB Institutional Repository | |
| dc.subject | Transfer characteristics curve | |
| dc.subject | Double gate MOSFETs | |
| dc.subject | ION | |
| dc.subject | DIBL | |
| dc.subject | SS | |
| dc.title | Sub-nano Regime DG-MOSFETs | |
| dc.type | Article |