Sub-nano Regime DG-MOSFETs
Date
2018
Journal Title
Journal ISSN
Volume Title
Publisher
STM Journals
Abstract
The significance of device performance of Gallium Nitride based double gate metal-oxide- semiconductor field-effect-transistor has been executed. The simulations were done by Silvaco Atlas simulation software with focusing on non-equilibrium green function (NEGF). Multiple gate length (LG=9.1 nm) was observed to distinguish the transfer characteristics curve. The other concentration was observed for device ON-State Current (ION), OFF-State Current (IOFF), Drain Induced Barrier Lowering (DIBL), Sub Threshold Slope (SS) and Electric Field (EF).
Description
Keywords
Transfer characteristics curve, Double gate MOSFETs, ION, DIBL, SS
Citation
Md. Rokib Hasan, Md. Rabiul Islam, Md. Kamrul Hassan and Mohammad Abdul Mannan, “Sub-nano Regime DG-MOSFETs,” Journal of Semiconductor Devices and Circuits (STM Journals), Vol. 5, Issue 3, pp. 1-7, 2018.