Performance Comparison between INAS on Insulator and Silicon on Insulator Mosfets Using a Compact Model

Abstract

Silicon-on-insulator (SOl) MOSFET is one of the modem state of the art transistor in Qruch a semiconductor layer like silicon is formed above an insulator layer on a semiconductor substrate. In SOl MOSFET, there is much more advantages over bulk silicon MOSFET such as high speed operation, low power consumption, small short channel effects. Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of lII-V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, we use a three surface potentials (gate oxide-silicon film interface, silicon-film-buried oxide interface and buried oxide-substrate interface) based compact model to study a fully depleted SOl and XOI MOSFETs. We have simulated the surface potentials, surface charge density, gate capacitance, drain current, transconductance and unity gain frequency of SOl and XOI MOSFETs. The different output characteristics show a better performance for InAs. We have got high drain current transconductance and unity gain frequency of XOI MOSFET. On the other hand, we got very low (negative) threshold voltage for XOI MOSFET. So, by using XOI MOSFET, we can get high speed operation and amplification, low power consumption than SOl MOSFET as well as bulk silicon MOSFET.