MOS device simulation using MEDICI

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dc.contributor.authorBhuyan, Muhibul Haque
dc.contributor.authorKhan, Sher Shermin Azmiri
dc.date.accessioned2022-08-21T10:14:04Z
dc.date.available2022-08-21T10:14:04Z
dc.date.issued2005-12-31
dc.descriptionThis is a joint research work.
dc.description.abstractMEDICI is a powerful device simulation program that can be used to simulate the behavior of MOS and other semiconductor devices. The program can be used to predict electrical characteristics for arbitrary bias conditions. In this paper, various characteristics of the conventional bulk MOS device have been simulated using the MEDlCl. Gate and drain characteristics, mobility and carrier concentration profiles, and effects of various device parameters on the threshold voltage of MOSFET are simulated. Finally, a CMOS is constructed and simulated to verify the MOS structure. Also, simulation results of threshold voltages are compared with the calculated results using the conventional bulk MOSFET equation.
dc.identifier.citationM. H. Bhuyan and S. S. A. Khan, “MOS device simulation using MEDICI,” Journal of Bangladesh Electronics Society, ISSN: p-1816-1510, vol. 5, no. 2, pp. 67-73, December 2005.
dc.identifier.otherhttp://dspace.aiub.edu:8080/xmlui/handle/123456789/684
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/684
dc.language.isoen_US
dc.publisherBangladesh Electronics and Informatics Society
dc.sourceAIUB Institutional Repository
dc.subjectMEDICI
dc.subjectMOSFET
dc.subjectSimulation
dc.subjectMOS Device
dc.subjectCharacteristics
dc.subjectThreshold Voltage
dc.titleMOS device simulation using MEDICI
dc.typeArticle

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