MOS device simulation using MEDICI
Date
2005-12-31
Journal Title
Journal ISSN
Volume Title
Publisher
Bangladesh Electronics and Informatics Society
Abstract
MEDICI is a powerful device simulation program that can be used to simulate the behavior of MOS and other semiconductor devices. The program can be used to predict electrical characteristics for arbitrary bias conditions. In this paper, various characteristics of the conventional bulk MOS device have been simulated using the MEDlCl. Gate and drain characteristics, mobility and carrier concentration profiles, and effects of various device parameters on the threshold voltage of MOSFET are simulated. Finally, a CMOS is constructed and simulated to verify the MOS structure. Also, simulation results of threshold voltages are compared with the calculated results using the conventional bulk MOSFET equation.
Description
This is a joint research work.
Keywords
MEDICI, MOSFET, Simulation, MOS Device, Characteristics, Threshold Voltage
Citation
M. H. Bhuyan and S. S. A. Khan, “MOS device simulation using MEDICI,” Journal of Bangladesh Electronics Society, ISSN: p-1816-1510, vol. 5, no. 2, pp. 67-73, December 2005.