I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

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dc.contributor.advisorSaha, Atanu Kumar
dc.contributor.authorAhmed, Saber
dc.contributor.authorSobhan, Rifat Binte
dc.date.accessioned2016-09-20T06:59:09Z
dc.date.available2016-09-20T06:59:09Z
dc.date.issued8/17/2016
dc.descriptionCataloged from PDF version of thesis report.
dc.descriptionIncludes bibliographical references (page 46-47).
dc.descriptionThis thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
dc.description.abstractIn this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD).
dc.identifier.otherID 13121044
dc.identifier.otherID 13121126
dc.identifier.otherhttps://dspace.bracu.ac.bd/server/api/core/items/ea9b0a3e-06de-47a0-9c84-dd073a3a4c16
dc.identifier.urihttp://hdl.handle.net/10361/6425
dc.language.isoen
dc.publisherBRAC University
dc.sourceBRAC University Institutional Repository
dc.subjectI-V Characteristics
dc.subjectNegative Differential Resistance (NDR)
dc.subjectResonant Tunneling Diodes (RTD)
dc.titleI-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode
dc.typeThesis

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Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)