I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode
Date
8/17/2016
Authors
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Journal ISSN
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Publisher
BRAC University
Abstract
In this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD).
Description
Cataloged from PDF version of thesis report.
Includes bibliographical references (page 46-47).
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
Includes bibliographical references (page 46-47).
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
Keywords
I-V Characteristics, Negative Differential Resistance (NDR), Resonant Tunneling Diodes (RTD)