Structural Properties of CdS Thin-films Deposited by RF Magnetron Sputtering

dc.contributor.authorAhamed, E.M.K. Ikball
dc.contributor.authorGupta, A.K.S.
dc.contributor.authorKhan, M.N.I.
dc.contributor.authorMatin, M.A.
dc.contributor.authorAmin, N.
dc.date.accessioned2026-07-06T21:29:15Z
dc.date.available2026-07-06T21:29:15Z
dc.date.issued26-Sep-2019
dc.description.abstractCadmium Sulfide (CdS) thin-films were deposited by RF magnetron sputtering at different RF power ambient and their structural properties were studied to observe the effect of different sputtering conditions on the structural properties of CdS films. CdS is widely used buffer layer for chalcopyrite based photovoltaic cells and requires good crystalline property and less dislocation density as well as strain in conjunction with a thinner layer ensures good crystalline quality. The as deposited films were characterized by X-ray diffraction and the structural properties (crystal type, lattice alignment, lattice constant, crystalline size, microstrain, dislocation density, etc.) were analyzed. Analysis on structural properties shows that crystallite size increases and crystalline quality enhanced with higher RF power, while the dislocation density and developed strain declined for the same conditions. This investigation concluded that higher RF power sputtered CdS thin-films for lower time deposition can be more suitable for thin-film photovoltaic cell applications.
dc.identifier.otherhttp://103.99.128.19:8080/jspui/handle/123456789/389
dc.identifier.urihttp://103.99.128.19:8080/xmlui/handle/123456789/389
dc.publisherDepartment of Electrical and Electronics Engineering, IUB
dc.sourceCUET Digital Repository
dc.subjectRF Sputtering
dc.subjectthin-films
dc.subjectCdS buffer layer
dc.subjectX-ray diffraction
dc.subjectcrystal structure
dc.subjectphotovoltaic cell applications
dc.titleStructural Properties of CdS Thin-films Deposited by RF Magnetron Sputtering
dc.title.alternative5th International Conference on Advances in Electrical Engineering (ICAEE)
dc.title.alternativeICAEE 2019

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