Physical Understanding of the Effect of the Interface Traps and Grain Boundary States on the Electrical Characteristics of P-type Polysilicon Nanowires Fabricated by Deposition and Spacer Etch Technique for Biosensors

Abstract

Over the past decades, semiconductor nanowires attracted quite a lot of attractors due to their unique electrical characteristics suitable for biochemical sensors (1-4). The reason of interest is due to label free high sensitivity detection of Bio molecules (5-10) without expensive optical components (11-17). The ult-high sensitivity is due to their smaller size and large surface to volume ratio enable single charge at the surface of the nano wires to deplete or accumulate entire cross selection area of nanowies (18-19)