Analysis of electron flow in potential channel structures discontinuous in transverse dimension

Abstract

Potential channel structures having single and double discontinuities in lateral dimensions are studied in detail. A matrix formulation has been developed using the continuity conditions for the electron wave function and its derivative. It has been shown that the flow of current is very sensitive to the length and lateral dimensions of the channel segments. Significant variation of the channel width can be achieved b,' applying external voltage in the transverse direction which paves the way for the device to be used as an amplifier. Time response' of the device is computed and is found to be very fast. Dependence of the current on the gate' voltage is studied and the calculated results are presented, Values of the transconductance for the proposed amplifier are calculated and a relatively high value of transconductance comparable to that of the existing FETs are obtained.