Cu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gap

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dc.contributor.authorTrukhanov, Sergei V.
dc.contributor.authorBodnar, Ivan V.
dc.contributor.authorKhoroshko, Vitaly V.
dc.contributor.authorYashchuk, Veronika A.
dc.contributor.authorGremenok, Valery F.
dc.contributor.authorKazi, Mohsin
dc.contributor.authorKhandaker, Mayeen .
dc.contributor.authorZubar, Tatiana
dc.contributor.authorTrukhanov, Sergei V.
dc.date.accessioned2025-11-13T06:04:10Z
dc.date.available2025-11-13T06:04:10Z
dc.date.issued2024-01-15
dc.descriptionArticles
dc.description.abstractThis work describes the production of single crystals of the semiconducting quaternary compound Cu2ZnGeSe4 using a gas chemical method in which iodine was used as a transporter. For all the synthesized samples, their phase state, crystal structure syngony and lattice constants were refined. The unit cell of the studied compound is characterized by tetragonal symmetry. The transmission spectrum was applied to calculate the band gap, which is depicted as temperature function in 20–300 K range. It was fixed that the band gap increases by 12% with decreasing temperature.
dc.identifier.otherhttp://dspace.daffodilvarsity.edu.bd:8080/handle/123456789/15559
dc.identifier.urihttp://dspace.daffodilvarsity.edu.bd:8080/handle/123456789/15559
dc.language.isoen_US
dc.publisherScopus
dc.sourceDIU Institutional Repository
dc.subjectCu₂ZnGeSe₄,
dc.subjectsingle crystals
dc.subjectgas chemical transport,
dc.subjectband gap,
dc.subjecttetragonal structure
dc.titleCu2ZnGeSe4 single crystals: Growth, structure and temperature dependence of band gap
dc.typeArticle

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