Investigation of short channel effects in MOSFET using the device simulator, MEDICI
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Date
2005-11-24
Journal Title
Journal ISSN
Volume Title
Publisher
Multimedia University, Malaysia
Abstract
Short channel effect is investigated using MEDICI. For long and short channel MOSFETs, threshold voltages are calculated using equations obtained from the literature. Calculated and simulation results show that one-dimensional device equation needs to be modified to include the short channel effects
Description
Keywords
MOS device, MEDICI, SCE, Threshold Voltage, Device Simulation, One-dimensional Device Equations
Citation
M. H. Bhuyan and S. S. A. Khan, “Investigation of short channel effects in MOSFET using the device simulator, MEDICI,” Proceedings of the Multimedia University International Symposium on Information and Communications Technologies, Petaling Jaya, Malaysia, Nov. 24-25, 2005, TS16 9-12