Frequency dependence of total gate capacitance of submicron inversion MOS structures

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dc.contributor.advisorShahidul Hassan, Dr. M. M.
dc.contributor.authorZahangir Kabir, Mohammad
dc.date.accessioned2016-09-20T05:07:22Z
dc.date.available2016-09-20T05:07:22Z
dc.date.issued1995-01
dc.description.abstractFor abstracts please see full text
dc.identifier.otherhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3787
dc.identifier.urihttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3787
dc.language.isoen
dc.publisherDepartment of Electrical and Electronic Engineering, BUET
dc.sourceBUET Institutional Repository
dc.subjectFrequency dependence
dc.subjectGate capacitance
dc.subjectSubmicron inversion
dc.subjectMOS structure
dc.titleFrequency dependence of total gate capacitance of submicron inversion MOS structures
dc.typeThesis-MSc

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