A Semi-Analytical Model for III-V Semiconductor Quantum Well Field Effect Transistors

Abstract

As conventional silicon transistors are reaching physical size limit, new materials and device structures are being assessed. Among the different materials proposed to continue the microelectronics revolution, III-V semiconductor technology is attracting attention due to its unique optical and electronic properties. As it has been well known for decades, the electron mobility of III-V compounds is much higher than the corresponding one in silicon. There has been tremendous progress made recently in the research of novel electronics for future applications [2]. Silicon has been used as the main material in the Integrated Circuits (IC). The device scaling is an important issue in semiconductor IC industries. Recently this continual device downsizing is becoming increasingly difficult because of both fundamental limitations and practical considerations as the transistor dimensions are approaching the deca-nanometer range [1]. As a result to attain this limiting size and high performance, high mobility channel materials like Ge and III-V materials have joined in present time. Recently, studies have been carried out on III-V compound semiconductors as potential channel materials for MOSFETs