Study of tunneling gate current in a MOS structure incorporating inelasting scattering processes

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2001-08

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Department of Electrical and Electronic Engineering, BUET

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Tunneling gate current, MOS structure, Incorporating inelasting, Scattering processes

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http://lib.buet.ac.bd:8080/xmlui/handle/123456789/3654

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Dissertations/Theses - Department of Electrical and Electronic Engineering

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