Temperature dependence of the transient characteristics in NPT IGBT using linear and parabolic model

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dc.contributor.advisorDas, Avijit
dc.contributor.authorTania, Shoulin
dc.contributor.authorSaha, Dipraj
dc.contributor.authorFaiza, Fahmida
dc.date.accessioned2017-02-09T04:54:49Z
dc.date.available2017-02-09T04:54:49Z
dc.date.issued12/14/2016
dc.descriptionCataloged from PDF version of thesis report.
dc.descriptionIncludes bibliographical references (page 59-60).
dc.descriptionThis thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
dc.description.abstractTo be considered as an efficient assistant, power semiconductor devices are being used in many power converter applications and technologies, particularly with high variable loads. In this regard, monitoring temperature of the device junction is indispensable. In this literature review, the characteristics of Non Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT) during the turn off state has been analyzed with the change in temperature in different carrier lifetimes. Moreover, the anode voltage, anode current, carrier charge and power loss characteristics of IGBT is shown by comparing the ideal linear model and parabolic model with temperature variance.
dc.identifier.otherID 12310008
dc.identifier.otherID 12121123
dc.identifier.otherID 12121036
dc.identifier.otherhttps://dspace.bracu.ac.bd/server/api/core/items/9f9f5285-c6da-487e-984e-219d863e1faf
dc.identifier.urihttp://hdl.handle.net/10361/7734
dc.language.isoen
dc.publisherBRAC University
dc.sourceBRAC University Institutional Repository
dc.subjectTemperature
dc.subjectTransient characteristics
dc.subjectNPT IGBT
dc.subjectParabolic model
dc.titleTemperature dependence of the transient characteristics in NPT IGBT using linear and parabolic model
dc.typeThesis

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Thesis & Design Report (Bachelor of Science in Electrical and Electronic Engineering)