Study of Scaling Effects of a Double Gate Silicon MOSFET

Abstract

Nowadays technology keeps progressing and device becomes smaller for fast processing. With small dimensions the quantum mechanical effects become prominent and the device performance degrades due to severe short channel effects such as threshold voltage roll off. We study the device dimensions effects on the performance of a double gate silicon MOSFET using energy balance model with Bohm quantum potential of Silvaco simulation tool. For a 2 nm SiO2 gate oxide with source-drain doping density, the device threshold voltage remains constant upto channel length of 40 nm, below which the threshold voltage falls off rapidly. The channel body thickness and oxide thickness affect the threshold voltage when the channel length is below 40 nm. We observe similar dimension effects on sub-threshold swing.