Wide Bandgap Semiconductor Based High Performance Bidirectional Resonant Converter for Electric Vehicle Application

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Date

2022-02-24

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Institute of Electrical and Electronics Engineers Inc.

Abstract

In this paper, a bidirectional capacitor-inductor-inductor-inductor-capacitor (CLLLC) resonant converter based on a wide bandgap (WBG) transistor is designed and analyzed at MHz-level switching frequency to accomplish high power density and high efficiency. A discrete-time Proportional-Integral-Derivative (PID) controller based on phase shifted pulse width modulation (PWM) technique has been developed for the closed-loop control of the aforementioned CLLLC converter. The converter is designed with WBG switching devices to accomplish fast switching with minimal switching losses, and it is also compared to Si-based switching devices. For the proper thermal design of the converter, a precise power loss model of the switching devices has been developed. A 5 kW CLLLC converter with 400-450V DC input and 250-465V DC output with an operating frequency of 1 MHz has been designed and simulated under a variety of loading conditions. The maximum conversion efficiency achieved with Gallium Nitride (GaN)-based devices was 97.2 percent in forward mode and 97 percent in reverse mode.

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Keywords

Bidirectional, CLLLC, DC-DC converter, high power density, GaN transistors, EV, MHz, WBG

Citation

Shahed, M. T., & Rashid, A. H. U. (2022, February). Wide bandgap semiconductor based high performance bidirectional resonant converter for electric vehicle application. In 2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE) (pp. 1-6). IEEE.

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