Design of silicon carbide based single quantum well white LED

Abstract

The unique optical and electrical properties of two-dimensional silicon carbide (2D-SiC) have lately attracted considerable attention as a potential element for optoelectronic systems. The initial goal of this work was to investigate the impact of different materials doped into SiC nanosheets on their electrical and optical properties, along with the impacts of strain, vacancy defects, and antisite defects in SiC. The direct energy bandgap of 2D SiC is calculated to be 2.57 eV. After a satisfactory examination of the electrical and optical properties, I suggested a 2D-SiC-based LED as the active layer. This LED depends on a single quantum well and is subsequently microscale-simulated utilizing the SILVACO TCAD program. The LED structure I created can generate visible light, namely in the blue, green, and red wavelengths, which together provide white light. The suggested LED device has been analyzed for power spectrum density, current-voltage characteristics, luminous power, CIE color coordinates, and light extraction efficiency. The light emission characteristics of this product offer several attractive attributes, including higher efficiency, heightened electrical conductivity, and higher electrical power.