Analytical modeling of inversion carrier effective mobility for drain current of nanoscale mosfet

Abstract

Critical transistor dimensions scale below the 100 nm regime. where quantum mechanical analysis is more appropriate than the semi-classical approach to model the device parameters. Simulation tools. which can be applied to design nanoscale transistors in the future. require new theory and modeling techniques that capture the physics of carrier transport accurately and efficiently. Quantum analysis needs rigorous calculation and it is time consuming. This thesis outlines an easy approach to model carrier transport in nanoscale transistors which is in between semi-classical and quantum mechanical analysis. The semi-classical expressions are modified so that the evaluated results are consistent with that derived quantum mechanically. In this work •.carrier scattering in the inversion channel has been described in terms of mobility. A simple model of the effective mobility of MOSFET is proposed taking into account the carrier scattering mechanisms. Current-voltage characteristics are obtained using the effective mobility. The model shows good agreement with the simulation and experimental results for nanoscale MOSFETs.