Performance Analysis of Heterojunction with Intrinsic Thin Layer (HIT) Solar Cell

Abstract

Nanocrystalline Si:H (nc-Si:H) heterojunction with intrinsic thin layer (HIT) solar cells with the structure of ITO/nc-Si:H(P+)/a-Si:H(i)/c-Si(n)/a-Si(i)/nc-Si:H(n+)/Al is studied in this work. Photovoltaic properties of the solar cells such as, open circuit voltage, Short circuit current, fill factor and efficiency are investigated. We have selected emitter thickness, emitter concentration, work function of contact and absorber length to be varied, and the impacts of varying these on the basic solar cell parameters are presented. Standard AM1.5 spectrum for incident photon is used for this analysis. ATLAS SILVACO is used to construct and simulate the HIT Solar cell. The result shows that open circuit voltage, short circuit current, fill factor and overall efficiency are obviously affected by emitter concentration, emitter thickness and work function of the solar cell. The HIT solar cell gives the maximum current at a work function of 5.3eV of front contact. The emitter concentration at higher level gives a higher efficiency and an optimization in emitter thickness yield better cell efficiency as well. The absorber length doesn’t affect the solar cell parameters.