Bandstru cture observation of graphene nanoribb on and boron-nitride nanoribbon embedded graphene nanoribbon

Abstract

Due to distinctive electronic properties and potential future application in tunable bandgap opening, Graphene Nanoribbon (GNR) has apprehended strong attention. Boron Nitride Nanoribbons (BNNR) exhibit analogous structure. Thus domains of Graphene embedded in Boron Nitride can be synthesized to open a bandgap exposing the semiconductor behavior of Graphene more precisely. A numeric investigation of the impact of GNR embedded in BNNR explains the bandgap tunability as well as transport property of Graphene. This unique versatility is likely to bring a radical change in electrical field not only by encouraging innovation but also by improving the mechanism of existing devices.