Characterization of Carbon Nanotube field effect transistor

Abstract

From the concept of material science, any materials haying an individual structure And characteristics have their own limitations. Due to the call for technological advancement, silicon-based integrated circuits and the scaling of’ silicon MOSFET design faces highcomplications like tunneling effect, short channel effect, gate oxide thickness effect etc. To solve these problems, new material alternatives are needed with such characteristics.

Recently, carbon nanotube has caught the attentions with promising future to replace silicon-based materials due to its superior electrical properties and characteristics. Simulation studies of carbon nanotube field-effect transistors ((CNFETs) are presented using models of increasing rigor and versatility that have been systematically developed. The studies and modeling of carbon nanotube, which includes band structures and current-voltage graphical plots, are covered in this thesis Also, analysis has been made to see the effect of gate oxide thickness change, temperature change, dielectric constant change, gate control coefficient, drain control coefficient and chirality changing effect on the device performance, in particular on the drain current. "The purpose of this paper is to study the behavior of CNFET and the twain focus is on the simulation of its current.-voltage (I-V) characteristic and observes the parameter changing effect on it. The simulation study is carried out using MATLAB program and the result obtained is used to compare the device performance with MOSFET. Resides, further analysis has been done through the comparison of' the simulation result of the other groups to justify ' result.