A study on the performance evaluation of a CNT-OPAMP by variation of SWNTs in the CNFET-channel region

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dc.contributor.authorRahman, Fahim
dc.contributor.authorZaidi, Asheque Mohammad
dc.contributor.authorAnam, Nadia
dc.contributor.authorAkter, Aysha
dc.contributor.authorFaiz, Rethwan
dc.date.accessioned2023-09-20T07:41:53Z
dc.date.available2023-09-20T07:41:53Z
dc.date.issued2011-12-01
dc.description.abstractIn this paper, a CNT-OPAMP has been designed using an eight-transistor OPAMP benchmark model and the performance of the OPAMP has been examined with the variation of the number of SWNTs used in the channel region of the CNTFETs. A simulation based assessment of the effect of increased nanotubes in the channel region is done, showing a gradual improvement in all the characteristic performance parameters of the CNT-OPAMP in comparison to conventional Si-based CMOS-OPAMP. A drastic improvement in bandwidth by 146% and a reduction in power consumption by 327.22% has been achieved for a five-tube CNFET based CNT-OPAMP suggesting CNT-OPAMP as a more suitable device for analog and mixed-signal operations in future nanoscale circuits.
dc.identifier.citationIEEE
dc.identifier.otherhttp://dspace.aiub.edu:8080/xmlui/handle/123456789/1109
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/1109
dc.language.isoen
dc.publisherIEEE
dc.sourceAIUB Institutional Repository
dc.subjectCNTFETs , Integrated circuit modeling , Performance evaluation , Carbon nanotubes , Bandwidth , Nanoscale devices
dc.titleA study on the performance evaluation of a CNT-OPAMP by variation of SWNTs in the CNFET-channel region
dc.typeArticle

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