A Semi-Analytical Drain Current Deflection Model for the Symmetric Pocket Implanted n-MOSFET Using Lorentz Force Analysis

Abstract

This paper introduces the effect of the magnetic field upon the deflection of the subthreshold drain current of the symmetric pocket implanted n-MOSFET. The symmetric pocket implanted n-MOSFET’s surface potential, threshold voltage, electron mobility, and subthreshold drain current models are used to study the effect of magnetic field on the subthreshold drain current deflection in the inversion channel. Magnetic field strength is varied from ±200 mT to ±250 mT. Results verify the theoretical derivations. This model can be used if short channel n-MOSFETs are used to develop the Magnetic FET Sensors (MFS) that have many practical applications.