Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET

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dc.contributor.authorFerdous, Fouzia
dc.contributor.authorBhuyan, Muhibul Haque
dc.contributor.authorKhosru, Quazi Deen Mohd
dc.date.accessioned2022-08-22T05:04:52Z
dc.date.available2022-08-22T05:04:52Z
dc.date.issued2013-03-07
dc.description.abstractThis paper presents an analytical model for the calculations of carrier diffusion time delay in pocket implanted nano scale n-MOSFET. The model is developed using the mobility model of the pocket implanted n-MOSFET developed previously. The developed model utilizes the linear pocket profile to derive the effective electric field that affects the mobility in the channel. The model has been studied using simulations for the various device and pocket profile parameters. The model will be useful to study the behaviour of the nano scaled pocket implanted n-MOSFET for high frequency operation.
dc.identifier.citationF. Ferdous, M. H. Bhuyan, and Q. D. M. Khosru, “Carrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET,” Proceedings of the International Conference on Electrical and Computer Engineering (ICECE), Dhaka, 20-22 December 2012, pp. 603-606.
dc.identifier.otherhttp://dspace.aiub.edu:8080/xmlui/handle/123456789/721
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/721
dc.language.isoen_US
dc.publisherIEEE
dc.sourceAIUB Institutional Repository
dc.subjectPocket implanted MOS device
dc.subjectnano scaled n-MOSFET
dc.subjectCarrier diffusion time delay
dc.subjectLinear Pocket Profile
dc.subjectMOSFET model
dc.subjectSimulation
dc.titleCarrier Diffusion Time Delay Model of Pocket Implanted Nano Scale n-MOSFET
dc.typeArticle

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