Base transit time of a bipolar junction transistor with nonuniformly doped base

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dc.contributor.advisorHassan, Dr. M. M. Shahidul
dc.contributor.authorZiaur Rahman Khan, Md.
dc.date.accessioned2016-08-07T08:17:19Z
dc.date.available2016-08-07T08:17:19Z
dc.date.issued2002-04-16
dc.description.abstractFor abstracts please see full text
dc.identifier.otherhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3607
dc.identifier.urihttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3607
dc.language.isoen
dc.publisherDepartment of Electrical and Electronic Engineering, BUET
dc.sourceBUET Institutional Repository
dc.subjectBase transit time
dc.subjectBipolar junction transistor
dc.subjectNonuniformly doped base
dc.titleBase transit time of a bipolar junction transistor with nonuniformly doped base
dc.typeThesis-MSc

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