Analytical Surface Potential Model for Pocket Implanted Fully Depleted Thin Film SOI n-MOSFET

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dc.contributor.authorBhuyan, Muhibul Haque
dc.contributor.authorKhosru, Quazi Deen Mohd
dc.date.accessioned2022-08-30T10:26:40Z
dc.date.available2022-08-30T10:26:40Z
dc.date.issued2012-10-03
dc.description.abstractIn this paper, a modified structure of the fully depleted thin film SOI n-MOSFET has been proposed by implanting symmetric pockets both at the source and drain sides. Then an analytical surface potential model for this proposed structure has been presented. The model has been simulated in a MATLAB environment for different bias conditions, pocket profile parameters, and device dimensions. Simulation results reveal that the incorporation of pockets in the thin film SOI n-MOSFET can produce surface potential accurately.
dc.identifier.citationM. H. Bhuyan and Q. D. M. Khosru, “Analytical Surface Potential Model for Pocket Implanted Fully Depleted Thin Film SOI n-MOSFET,” Proceedings of the National Conference on Electronics and ICT for National Development organized by the Bangladesh Electronics Society, Dhaka, Bangladesh, 3-4 October 2012, pp. 275-281.
dc.identifier.otherhttp://dspace.aiub.edu:8080/xmlui/handle/123456789/791
dc.identifier.urihttp://dspace.aiub.edu:8080/jspui/handle/123456789/791
dc.language.isoen_US
dc.publisherBangladesh Electronics and Informatics Society
dc.sourceAIUB Institutional Repository
dc.subjectPocket implanted MOS device
dc.subjectSOI-MOSFET
dc.subjectSurface potential
dc.subjectThreshold Voltage
dc.subjectMOSFET model
dc.subjectPocket length
dc.subjectPocket concentration
dc.subjectSimulation
dc.subjectMATLAB
dc.subjectFully Depleted
dc.titleAnalytical Surface Potential Model for Pocket Implanted Fully Depleted Thin Film SOI n-MOSFET
dc.typeArticle

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