Study of gate leakage current in double gate MOS structures incorporating quantum mechanical effects

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dc.contributor.advisorKhosru, Dr. Quazi Deen Mohd.
dc.contributor.authorSabbir Ahmed
dc.date.accessioned2016-06-29T03:46:32Z
dc.date.available2016-06-29T03:46:32Z
dc.date.issued2007-12-09
dc.description.abstractFor abstracts please see full text
dc.identifier.otherhttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3396
dc.identifier.urihttp://lib.buet.ac.bd:8080/xmlui/handle/123456789/3396
dc.language.isoen
dc.publisherDepartment of Electrical and Electronic Engineering, BUET
dc.sourceBUET Institutional Repository
dc.subjectMOSFET
dc.titleStudy of gate leakage current in double gate MOS structures incorporating quantum mechanical effects
dc.typeThesis-MSc

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