Voids in phase change memory Nanodevices

Abstract

An experimental and Finite Element Model (FEM) approach has been taken in this study to predict and model the formation of voids in melt-quenched or as-deposited amorphous Ge2Sb2Te5 and Silicon during annealing. This study includes the thermal models that account for laser heating of the nanostructures during device production, as well as the void generation with crystal nucleation and growth. Furthermore, the framework is put through various sets of simulations involving set/reset operations, set/reset cycles, in a mushroom cell with temperature and crystallinity dependent parameters for Ge2Sb2Te5. The contrast in resistance due to void formation is analyzed both mathematically and also in simulation using Si nanostructure. Finally, various aspects of impacts and sustainability is reflected at the end of this report.