Optical characterisation of single junction monocrytalline silicon solar cell

Abstract

In this paper the character of a solar cell in terms of minority carrier diffusion length through surface photovoltage (SPV) technique is studied. SPV is measured with respect to wavelength where the spectral range is 400-1200 nm. A 200 μm thickness of 3″ X 3″ mono-crystalline silicon solar cell is used for the calculation purpose; through which the values of total carrier generation and recombination during illumination are found. For the range, 700-1000 nm wavelength penetration depth of the cell can be found. This helps in plotting of a curve that eventually gives us the value of carrier diffusion length which also helps in determining minority carrier lifetime of the cell, short circuit current density, optimum value of generation etc. For further study of the cells character, an efficiency test and an external quantum efficiency test is done via pre-set instruments built for the specific purpose, which helps in further confirmation of the quality of the fabricated cell.