Browsing by Author "Robin, M.S.R.,"

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    Analytical study of high efficient Cu(In,Ga)Se2 solar cell with In2S3 buffer layer
    (Institute of Electrical and Electronics Engineers Inc., 2017-02-14) Robin, M.S.R.,; Meheraj, K.I.,; Sarker, S.Z.
    This paper represents a lucid numerical analysis of thin film Cu(In,Ga)Se2 (CIGS) solar cell with In2S3 (Indium Sulphide) buffer layer by using SCAPS-1D. The effect of band gap, concentration and thickness of both Cu(In,Ga)Se2 absorber layer and In2S3 buffer layer are investigated in this simulation. This study is focused to analyze electrical performances of In2S3 buffer layer based Cu(In,Ga)Se2 solar cell for a better substitute of toxic CdS buffer layer. The optimum thickness has found 40 nm for In2S3 buffer layer and 3000 nm for Cu(In,Ga)Se2 absorber layer. In addition, the optimum band gap of CIGS and In2S3 layer has attained 1.10 eV and 2.6 eV subsequently and 25.03% efficiency has achieved along with 0.75 V open circuit voltage (Voc), 39.435 mA/cm2 short circuit current density (Jsc) and 84.62% Fill Factor (FF).
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    Numerical modeling and analysis of ultra thin film Cu(In, Ga)Se2 solar cell using SCAPS-1D
    (Institute of Electrical and Electronics Engineers Inc., 2017-03-06) Robin, M.S.R.,; Rasmi, M.M.M.,; Sarker, M.S.Z.; Rabbi Al Mamun, A.S.M.
    This paper exhibits a numerical analysis of ultra thin film Cu(In, Ga)Se2 (CIGS) solar cell which has been performed by using SCAPS-1D simulator. In this paper, the performances of CIGS solar cell is observed by varying absorber layer, buffer layer and window layer thickness. Also the effect of temperature has been carried out. The aim of this work is optimization of CIGS solar cell thickness as well as the efficiency. Results represent that solar cell performances have enhanced with rise in thickness of CIGS absorber layer. Meanwhile opposite scenario is found with the rise in buffer layer and window layer thickness. The highest cell efficiency achieved is 22.67% with 0.7862 V open circuit voltage (Voc), 34.130 mA/cm2 short circuit current density (Jsc) and 84.49% Fill Factor (FF) on 2000 nm CIGS absorber layer.
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    Numerical modeling and analysis of ultra thin film Cu(In, Ga)Se2 solar cell using SCAPS-1D
    (Institute of Electrical and Electronics Engineers Inc., 2017-03-06) Robin, M.S.R.,; Rasmi, M.M.M.,; Sarker, M.S.Z.,; Rabbi Al Mamun, A.S.M.
    This paper exhibits a numerical analysis of ultra thin film Cu(In, Ga)Se2 (CIGS) solar cell which has been performed by using SCAPS-1D simulator. In this paper, the performances of CIGS solar cell is observed by varying absorber layer, buffer layer and window layer thickness. Also the effect of temperature has been carried out. The aim of this work is optimization of CIGS solar cell thickness as well as the efficiency. Results represent that solar cell performances have enhanced with rise in thickness of CIGS absorber layer. Meanwhile opposite scenario is found with the rise in buffer layer and window layer thickness. The highest cell efficiency achieved is 22.67% with 0.7862 V open circuit voltage (Voc), 34.130 mA/cm2 short circuit current density (Jsc) and 84.49% Fill Factor (FF) on 2000 nm CIGS absorber layer.