Browsing by Author "Ali, M Tanseer"

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Comparative Analysis of Program Outcomes Achievement between Face-to-Face and Virtual Classes during COVID-19 Pandemic
(AIUB Journal of Science and Engineering (AJSE), 2021-04-20) Ali, M Tanseer; Rahman, Md. Abdur; Lamagna, Carmen Z.
Outcome based engineering education is a paradigm shift from traditional knowledge-based education to modern skill-based education. After the Washington Accord, the engineering education all over the world has adopted the new pedagogy for Engineering Education. But last year, after the hit of COVID – 19 pandemics, most of the education system has to move online. The online education platform raised a new challenge for Outcome Based Education. In this paper, the effect of Online education on OBE implemented B.Sc. in Electrical and Electronic Engineering program has been analyzed and the attainment performance of the Program Outcomes has been presented. With this empirical evidence it has been demonstrated that with careful implementation and encouragement OBE can achieve its potential even with Online education.
Comparative Analysis of Program Outcomes Achievement between Face-to-Face and Virtual Classes during COVID-19 Pandemic
(AIUB Journal of Science and Engineering (AJSE), 2021-04-20) Ali, M Tanseer; Rahman, Md. Abdur; Lamagna, Carmen Z.
Outcome based engineering education is a paradigm shift from traditional knowledge-based education to modern skill-based education. After the Washington Accord, the engineering education all over the world has adopted the new pedagogy for Engineering Education. But last year, after the hit of COVID – 19 pandemics, most of the education system has to move online. The online education platform raised a new challenge for Outcome Based Education. In this paper, the effect of Online education on OBE implemented B.Sc. in Electrical and Electronic Engineering program has been analyzed and the attainment performance of the Program Outcomes has been presented. With this empirical evidence it has been demonstrated that with careful implementation and encouragement OBE can achieve its potential even with Online education.
Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor
(American International University-Bangladesh (AIUB), 2019-08) Islam, Md Rabiul; Hasan, Md Kamrul; Mannan, Mohmammad Abdul; Ali, M Tanseer
We have investigated the performance of Gallium Nitride (GaN) based Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Atlas Device Simulation Framework -Silvaco has been used to access Non-Equilibrium Green Function to distinguish the transfer characteristics curve, ON state current (ION), OFF-state current (IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Electron Current Density, Conduction Band Energy and Electric Field. The concept of Solid state device physics on the effect of gate length studied for the next generation logic applications. GaN-based DG MOSFETs shows better performance than Si-based Single gate MOSFETs. The proposed device has drawn the attention over conventional SG-MOSFET due to fas switching performance. The device turn on and turn off voltage is respectively VGS=1V(On state) and VGS-0V(OFF State). To validate our simulation tool and model results, previous research model has been investigated using Silvaco Atlas and the results obtained are compared to the previous results.
Impact of Si and GaAs as Semiconductor Materials: Designing to Application-Level Comparison
(AJSE, 2024-08-30) Nazreen, Syeda Fahima; Ali, M Tanseer
The semiconductor industry has made life easier by providing many electronic devices. With the advancement of technology, electronic devices need to be updated. This gradual upgrade has led the industry towards nanotechnology. The study aims to provide an analytical comparison from design to application level of the impact of Si and GaAs as semiconductor materials in designing 3D density gradient nanowire MOSFETS. The model has been designed and evaluated based on the characteristics curve and transconductance range. The drain current in the Id - Vg and Id – Vd curves for the GaAs - used model is higher than the Si - used model by about 10 times, which is useful for analog applications. The threshold voltage for both models is 0.7V. Besides that, the electron concentration formed a potential well of about 104 for GaAs - used material compared to the model made using Si. In the case of AC analysis, the transconductance range for the model using GaAs is almost double that of the model designed using Si. Later, the extracted data from the curves were utilized to generate model and library files. Finally, an inverter circuit and biasing circuit have been designed with models where the output of the inverter circuit perfectly works. The frequency response curve generated using the biasing circuit showed that the cut - off frequency of the GaAs – used model is 10MHz, whereas it is 1MHz for the Si-used model.
Modeling and performance analysis of a transparent multilayer solar cell
(AJSE, 2023-12-30) Sultana Rupa, Maria; Ali, M Tanseer; Mannan, Mohammad Abdul; Hasan, Mehedi
Transparent solar cells have emerged as a promising frontier in renewable energy research, offering the dual functionality of generating electricity while maintaining transparency. Five layers of InAs/InSb/AlGaAs/GaN/Si are incorporated into the proposed model structure whichtakes the properties of the source materials into consideration. Simulations of electromagnetic waves are used to evaluate optical and electrical properties. The cell is assumed to function at room temperature in the simulated settings. The I-V curve's fill factor (F.F.) of 0.6531 corresponds to a maximum conversion efficiency of 15.2655%, according to the data. Furthermore, at 530 nm, this combination and device configuration show a very good transparencyof up to 60%